DocumentCode :
820052
Title :
CMOS Image Sensors With Self-Powered Generation Capability
Author :
Fish, Alexander ; Hamami, Shy ; Yadid-Pecht, Orly
Author_Institution :
VLSI Syst. Center, Beer-Sheva
Volume :
53
Issue :
11
fYear :
2006
Firstpage :
1210
Lastpage :
1214
Abstract :
Considerations for CMOS image sensors with self-power generation capability design are presented. Design of CMOS imagers, utilizing self-powered sensors (SPS) is a new approach for ultra low-power CMOS active pixel sensors (APS) implementations. The SPS architecture allows generation of electric power by employing a light sensitive device, located on the same silicon die with an APS and thus reduces power dissipation from the conventional power supply. A detailed analysis of the SPS structure is carried out, with respect to power dissipation requirements, sensor area and power generation efficiency, showing advantages and drawbacks of the proposed concept. An illustrative example of CMOS imager with self-power generation capability in 0.18-mum standard CMOS technology is discussed. Measurements from a test chip, implemented in 0.18-mum CMOS process, are presented
Keywords :
CMOS image sensors; low-power electronics; optical sensors; 0.18 micron; CMOS active pixel sensors; CMOS image sensors; CMOS imagers; electric power generation; light sensitive device; power generated photodiode; self-powered generation capability; self-powered sensors; CMOS image sensors; CMOS technology; Image generation; Pixel; Power dissipation; Power generation; Power supplies; Semiconductor device measurement; Silicon; Testing; Active pixel sensor (APS); low-power sensor; power generated photo diode (PGPd); self-powered sensor (SPS);
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2006.882858
Filename :
4012378
Link To Document :
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