Title :
Proposal and experimental demonstration of magnetic tunnel junction connected in parallel with tunnel diode
Author :
Uemura, T. ; Honma, S. ; Marukame, T. ; Yamamoto, M.
Author_Institution :
Div. of Electron. & Inf. Eng., Hokkaido Univ., Sapporo, Japan
Abstract :
A novel magnetic random access memory cell consisting of a magneto-tunnel junction (MTJ) and tunnel diode connected in parallel is described. The negative differential resistance characteristics of the tunnel diode were used to increase the tunnelling magneto-resistance (TMR) ratio of the MTJ. The fabricated circuit showed that the TMR ratio was enhanced from its original value of 11 to 103%.
Keywords :
magnetic storage; magnetoresistive devices; random-access storage; tunnel diodes; tunnelling magnetoresistance; NDR characteristics; TMR effect; ferromagnetic electrodes; magnetic RAM cell; magnetic tunnel junction; negative differential resistance characteristics; parallel connection; tunnel diode; tunnelling magneto-resistance effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030991
