Wide Emission Wavelength InAs/InP Quantum Dots Grown by Double-Capped Procedure Using MOVPE Selective Area Growth

Author

Akaishi, Masataka ; Okawa, Tatsuya ; Saito, Yasuhito ; Shimomura, Kazuhiko

Author_Institution

Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo

Volume

14

Issue

4

fYear

2008

Firstpage

1197

Lastpage

1203

Abstract

A growth technique for wide emission wavelength quantum dots (QDs) via the Stranski-Krastanov (S-K) growth mode using a double-cap procedure and metal-organic vapor phase epitaxy (MOVPE) selective area growth is proposed. By using the double-cap procedure, we have improved the uniformity of the QDs height. Selective area growth by low-pressure MOVPE using a SiO₂ narrow stripe mask array pattern was carried for controlling and widening the emission wavelength range of the QDs in 16 stripe mask array waveguides. We have successfully demonstrated QD characteristics under various growth conditions, and have realized 120 nm emission wavelength range in 16 array, five layer InAs QD waveguides.

Keywords

III-V semiconductors; MOCVD; indium compounds; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; InAs-InP; MOVPE selective area growth; Stranski-Krastanov growth mode; metal-organic vapor phase epitaxy; quantum dots; wide emission wavelength; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Optical device fabrication; Optical devices; Optical waveguides; Photonic band gap; Quantum dots; Substrates; Double-cap procedure; InAs/InP; metal–organic vapor phase epitaxy (MOVPE); quantum dots (QDs); selective area growth; self-organized;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2008.917625

Filename

4582357