Title :
Wide Emission Wavelength InAs/InP Quantum Dots Grown by Double-Capped Procedure Using MOVPE Selective Area Growth
Author :
Akaishi, Masataka ; Okawa, Tatsuya ; Saito, Yasuhito ; Shimomura, Kazuhiko
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo
Abstract :
A growth technique for wide emission wavelength quantum dots (QDs) via the Stranski-Krastanov (S-K) growth mode using a double-cap procedure and metal-organic vapor phase epitaxy (MOVPE) selective area growth is proposed. By using the double-cap procedure, we have improved the uniformity of the QDs height. Selective area growth by low-pressure MOVPE using a SiO2 narrow stripe mask array pattern was carried for controlling and widening the emission wavelength range of the QDs in 16 stripe mask array waveguides. We have successfully demonstrated QD characteristics under various growth conditions, and have realized 120 nm emission wavelength range in 16 array, five layer InAs QD waveguides.
Keywords :
III-V semiconductors; MOCVD; indium compounds; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; InAs-InP; MOVPE selective area growth; Stranski-Krastanov growth mode; metal-organic vapor phase epitaxy; quantum dots; wide emission wavelength; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Optical device fabrication; Optical devices; Optical waveguides; Photonic band gap; Quantum dots; Substrates; Double-cap procedure; InAs/InP; metal–organic vapor phase epitaxy (MOVPE); quantum dots (QDs); selective area growth; self-organized;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2008.917625
