Microstructural investigations of FeN and FeAlN thin films for recording head applications

Author

Rogers, D.J. ; Wang, S. ; Laughlin, D.E. ; Kryder, M.H.

Author_Institution

Data Storage Syst. Center, Carnegie Mellon Univ., Pittsburgh, PA, USA

Volume

28

Issue

5

fYear

1992

fDate

9/1/1992 12:00:00 AM

Firstpage

2418

Lastpage

2420

Abstract

A series of FeN and FeAlN thin films were grown by reactive RF sputter deposition. Planar and cross-sectional specimens were investigated in the transmission electron microscope (TEM). It is observed that introduction of nitrogen is associated with improved magnetic properties and decreased grain size. and that the introduction of Al is associated with improved thermal stability of both the magnetic properties and the microstructures. The authors also investigated the effect of lamination and the role of the interlayer. They found the best magnetic properties in annealed films with five 1000-Å-thick FeN layers and four 25-Å-thick SiO₂ interlayers. High-resolution TEM studies of cross-sectional specimens revealed an amorphous structure in this interlayer, providing crystallographic decoupling between the FeN layers. It is proposed that this SiO₂ layer also serves to reduce magnetic coupling between layers

Keywords

aluminium compounds; crystal microstructure; ferromagnetic properties of substances; grain size; iron compounds; magnetic heads; magnetic multilayers; sputtered coatings; transmission electron microscope examination of materials; FeAlN films; FeN films; SiO₂ interlayers; TEM studies; annealed films; cross-sectional specimens; crystallographic decoupling; effect of lamination; grain size; magnetic coupling; magnetic properties; magnetic thin films; microstructures; multilayers; reactive RF sputter deposition; recording head; thermal stability; Grain size; Lamination; Magnetic properties; Microstructure; Nitrogen; Radio frequency; Sputtering; Thermal stability; Transistors; Transmission electron microscopy;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.179511

Filename

179511