Title :
Effects of data rate and transistor size on single event upset cross-sections for InP-based circuits
Author :
Hansen, D.L. ; Chu, P. ; Meyer, S.F.
Author_Institution :
Boeing Satellite Syst., Los Angeles, CA
Abstract :
We present results from SEU testing of two limiter-amplifier ASICs. The circuits are electrically identical except that they are fabricated using different generations InP-based HBT technology. Cross sections measured at clock speeds of 6.4 and 12.8 GHz show technology dependence, and are analyzed to determine charge collection dynamics. Our results agree with previous simulations, as well as experiments on similar technologies
Keywords :
amplifiers; application specific integrated circuits; heterojunction bipolar transistors; nuclear electronics; InP-based HBT technology; InP-based circuits; SEU testing; charge collection dynamics; clock speeds; data rate effects; electrically identical circuits; heterojunction bipolar transistors; indium compounds; limiter-amplifier ASIC; single event upset cross-sections; transistor size; Charge measurement; Circuit testing; Clocks; Current measurement; Frequency; Heterojunction bipolar transistors; Single event upset; Space technology; Space vehicles; Velocity measurement; Heterojunction bipolar transistors; indium compounds; single event upset (SEU);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.855646
