Title :
Undoped InSb Schottky detector for gamma-ray measurements
Author :
Hishiki, Shigeomi ; Kanno, Ikuo ; Sugiura, Osamu ; Xiang, Ruifei ; Nakamura, Tatsuya ; Katagiri, Masaki
Author_Institution :
Graduate Sch. of Eng., Kyoto Univ.
Abstract :
For measuring X-rays and gamma-rays with better energy resolution and higher efficiency than conventional semiconductor detectors such as Si and Ge detectors, we are studying InSb radiation detectors. Previously, we fabricated p-InSb Schottky type, pn-junction type detectors, and undoped InSb Schottky type detectors with an electrode of 3 mm in diameter, and measured alpha particles of 241Am. For measuring gamma-rays, we fabricated undoped InSb Schottky type detectors with smaller electrode areas. Gamma-ray signals were clearly separated from the background, and differences between energy spectra of 241 Am and 133Ba gamma-rays were observed
Keywords :
X-ray detection; cryogenics; electrodes; gamma-ray detection; semiconductor counters; 133Ba; 241Am; Schottky barrier height; X-ray measurements; alpha particle measurement; conventional semiconductor detectors; cryogenic detector; depletion layer thickness; electrodes; energy resolution; energy spectra; gamma-ray measurements; p-InSb Schottky type detectors; pn-junction type detectors; radiation detectors; undoped InSb Schottky detector; Area measurement; Electrodes; Gamma ray detection; Gamma ray detectors; Particle measurements; Radiation detectors; Semiconductor radiation detectors; Silicon radiation detectors; X-ray detection; X-ray detectors; Cryogenic detector; InSb; Schottky barrier height; depletion layer thickness; gamma-ray; low temperature; semiconductor detector;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.869817