DocumentCode :
820414
Title :
Quantum Dots-in-a-Well Focal Plane Arrays
Author :
Vandervelde, T.E. ; Lenz, M.C. ; Varley, E. ; Barve, A. ; Jiayi Shao ; Shenoi, R.V. ; Ramirez, D.A. ; Wooyong Jan ; Sharma, Y.D. ; Krishna, S.
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM
Volume :
14
Issue :
4
fYear :
2008
Firstpage :
1150
Lastpage :
1161
Abstract :
In this paper, the basics and some of the recent developments in quantum dots-in-a-well (DWELL) focal plane arrays (FPAs) are reviewed. Fundamentally, these detectors represent a hybrid between a conventional quantum well infrared photodetector (QWIP) and a quantum dot infrared photodetector (QDIP), in which the active region consists of quantum dots (QDs) embedded in a quantum well (QW). This hybridization grants DWELLs many of the advantages of its components. These advantages include normally incident photon sensitivity without gratings or optocoupers, like QDIPs, and reproducible control over operating wavelength through ldquodial-in recipesrdquo as seen in QWIPs. Recently reported high-temperature operation results for DWELL FPAs now back up the conclusions drawn by the long carrier lifetimes observed in DWELL heterostructures using femtosecond spectroscopy. This paper will conclude with a preview of some upcoming advances in the field of DWELL FPAs.
Keywords :
III-V semiconductors; carrier lifetime; focal planes; gallium arsenide; high-speed optical techniques; indium compounds; infrared detectors; molecular beam epitaxial growth; photodetectors; semiconductor quantum dots; transmission electron microscopy; InAs-InGaAs; carrier lifetimes; femtosecond spectroscopy; focal plane array; molecular beam epitaxy; normally incident photon sensitivity; quantum dot infrared photodetector; quantum well infrared photodetector; transmission electron microscopy; Back; Carrier confinement; Gratings; Infrared detectors; Laboratories; Optical control; Optoelectronic devices; Photodetectors; Potential well; Quantum dots; III–V; focal plane array (FPA); infrared detectors; photodetectors; quantum dots (QDs); semiconductors;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2008.918246
Filename :
4582397
Link To Document :
بازگشت