Potential of InGaAs/GaAs Quantum Dots for Applications in Vertical Cavity Semiconductor Optical Amplifiers

Author

Vasileiadis, Miltiadis ; Alexandropoulos, Dimitris ; Adams, Michael J. ; Simos, Hercules ; Syvrid, Dimitris

Author_Institution

Dept. of Mater. Sci., Patras Univ., Patras

Volume

14

Issue

4

fYear

2008

Firstpage

1180

Lastpage

1187

Abstract

The use of InGaAs/GaAs quantum dots (QDs) in vertical cavity semiconductor optical amplifiers (VCSOAs) is proposed and analyzed. The results underline the distinctive differences between practical designs for QD vertical cavity semiconductor lasers and QD-VCSOAs. By means of a QD rate-equation scheme that accounts for both homogeneous and inhomogeneous broadening and the VCSOA cavity characteristics, the effects of material properties are identified. The design routes outlined here ensure the suitability of QD-VCSOAs for high-speed applications (>100 Gb/s) that rely on the fast carrier dynamics.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; semiconductor optical amplifiers; surface emitting lasers; InGaAs-GaAs; VCSEL; VCSOA; quantum dots; vertical cavity semiconductor lasers; vertical cavity semiconductor optical amplifiers; Gallium arsenide; Indium gallium arsenide; Optical design; Optical fiber networks; Optical filters; Optical interconnections; Optical signal processing; Quantum dots; Semiconductor lasers; Semiconductor optical amplifiers; Quantum dots (QDs); vertical cavity semiconductor laser (VCSEL); vertical cavity semiconductor optical amplifier (VCSOA);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2007.915517

Filename

4582398