Title :
800 mW peak-power self-sustained pulsation GaAlAs laser diodes
Author :
Takayama, Toru ; Imafuji, Osamu ; Yuri, Masaaki ; Naito, Hiroki ; Kume, Masahiro ; Yoshikawa, Akio ; Itoh, Kunio
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
We have developed a high-power self-sustained pulsation laser by using a multiple-quantum-well real refractive index guided self-aligned (RISA) structure that allows formation of large saturable absorbers outside a stripe region. As a result, a peak power as high as 800 mW was obtained in the laser with the stripe width of 1.0 μm
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical saturable absorption; quantum well lasers; waveguide lasers; 1.0 micron; 800 mW; 800 mW peak-power self-sustained pulsation GaAlAs laser diodes; GaAlAs; MQW real refractive index guided self-aligned structure; high-power self-sustained pulsation laser; large saturable absorbers; multiple-quantum-well RISA; stripe region; stripe width; Diode lasers; Electrodes; Nonlinear optics; Optical bistability; Optical harmonic generation; Optical refraction; Optical variables control; Power lasers; Quantum well devices; Refractive index;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.401242
