DocumentCode
820474
Title
800 mW peak-power self-sustained pulsation GaAlAs laser diodes
Author
Takayama, Toru ; Imafuji, Osamu ; Yuri, Masaaki ; Naito, Hiroki ; Kume, Masahiro ; Yoshikawa, Akio ; Itoh, Kunio
Author_Institution
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Volume
1
Issue
2
fYear
1995
fDate
6/1/1995 12:00:00 AM
Firstpage
562
Lastpage
568
Abstract
We have developed a high-power self-sustained pulsation laser by using a multiple-quantum-well real refractive index guided self-aligned (RISA) structure that allows formation of large saturable absorbers outside a stripe region. As a result, a peak power as high as 800 mW was obtained in the laser with the stripe width of 1.0 μm
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; optical saturable absorption; quantum well lasers; waveguide lasers; 1.0 micron; 800 mW; 800 mW peak-power self-sustained pulsation GaAlAs laser diodes; GaAlAs; MQW real refractive index guided self-aligned structure; high-power self-sustained pulsation laser; large saturable absorbers; multiple-quantum-well RISA; stripe region; stripe width; Diode lasers; Electrodes; Nonlinear optics; Optical bistability; Optical harmonic generation; Optical refraction; Optical variables control; Power lasers; Quantum well devices; Refractive index;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/2944.401242
Filename
401242
Link To Document