• DocumentCode
    820534
  • Title

    Radiation Hardened CMOS/SOS

  • Author

    Aubuchon, K.G. ; Harari, E.

  • Author_Institution
    Hughes Aircraft Company Newport Beach, California 92663
  • Volume
    22
  • Issue
    6
  • fYear
    1975
  • Firstpage
    2181
  • Lastpage
    2184
  • Abstract
    This paper reports the results of experiments designed to optimize the total dose ionizing radiation hardness of CMOS/SOS devices. Type 4007 inverter circuits were fabricated with variations in the process, including wet versus dry gate oxidation. Tolerable values (e. g. < l¿A per mil of channel width) of post-radiation n-channel back leakage were obtained only with wet oxides. Threshold shifts of ¿1V for the n-channel devices and ¿2V for the p-channel devices were obtained after 106 rads (Si) on the best devices fabricated.
  • Keywords
    Aircraft; Circuits; Design optimization; Inverters; Ionizing radiation; Oxidation; Photoconductivity; Radiation hardening; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1975.4328101
  • Filename
    4328101
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=820534