Five-parameter DC GaAs MESFET model for nonlinear circuit design

Author

Rodriguez-Tellez, J. ; England, P.J.

Author_Institution

Dept. of Electr. Eng., Bradford Univ., UK

Volume

139

Issue

3

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

325

Lastpage

332

Abstract

An improved gallium arsenide (GaAs) MESFET model for nonlinear large-signal circuit design is described, together with the parameter estimation and optimisation techniques. The new model is based on the work of Curtice (1980) and offers significant advantages in the simulation of the device in the low-current region. This is achieved by modelling the bias dependency of the pinch-off voltage. Data showing the bias dependency of the device model parameters is provided and a comparison between the new model, the Curtice model and the Schichman-Hodges FET model is made, with the use of a wide variety of different size devices. The software modules for the automated characterisation and modelling of GaAs devices are also described

Keywords

III-V semiconductors; Schottky gate field effect transistors; electronic engineering computing; gallium arsenide; nonlinear network synthesis; optimisation; parameter estimation; semiconductor device models; GaAs; MESFET model for; automated characterisation; bias dependency; device model parameters; five-parameter DC model; large-signal circuit design; low-current region; modelling; nonlinear circuit design; optimisation techniques; parameter estimation; pinchoff voltage; simulation; software modules;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings G

Publisher

iet

ISSN

0956-3768

Type

jour

Filename

143329