Title :
Radiation Hardening of MOS Integrated Circuits on <111> Silicon
Author_Institution :
Rockwell International Corporation, Electronics Research Division 3370 Miraloma Avenue, Anaheim, California
Keywords :
Chromium; Etching; Fabrication; MOS integrated circuits; MOSFETs; Oxidation; Radiation hardening; Silicon; Temperature; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1975.4328103
