DocumentCode

820551

Title

Radiation Hardening of MOS Integrated Circuits on <111> Silicon

Author

Phillips, D.H.

Author_Institution

Rockwell International Corporation, Electronics Research Division 3370 Miraloma Avenue, Anaheim, California

Volume

22

Issue

6

fYear

1975

Firstpage

2190

Lastpage

2192

Keywords

Chromium; Etching; Fabrication; MOS integrated circuits; MOSFETs; Oxidation; Radiation hardening; Silicon; Temperature; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.1975.4328103

Filename

4328103