DocumentCode

820566

Title

Radiation-Induced Surface States in MOS Devices

Author

Kjar, R.A. ; Nichols, D.K.

Author_Institution

Rockwell International, Electronics Research Division 3370 Miraloma Avenue, Anaheim, California

Volume

22

Issue

6

fYear

1975

Firstpage

2193

Lastpage

2196

Keywords

Aluminum; Capacitance measurement; Chromium; Doping; Fabrication; Frequency measurement; MOS capacitors; MOS devices; Oxidation; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.1975.4328104

Filename

4328104