Title :
Radiation-Induced Surface States in MOS Devices
Author :
Kjar, R.A. ; Nichols, D.K.
Author_Institution :
Rockwell International, Electronics Research Division 3370 Miraloma Avenue, Anaheim, California
Keywords :
Aluminum; Capacitance measurement; Chromium; Doping; Fabrication; Frequency measurement; MOS capacitors; MOS devices; Oxidation; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1975.4328104
