Title :
Hole Transport in MOS Oxides
Author :
Hughes, R.C. ; EerNisse, E.P. ; Stein, H.J.
Author_Institution :
Sandia Laboratories, Albuquerque, New Mexico 87115
Keywords :
Charge carrier processes; Electron beams; Electron mobility; Electron traps; Ion implantation; Laboratories; Motion detection; Photoconductivity; Pulse generation; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1975.4328110
