Title :
Noise characteristics of n-channel deep-depletion mode MOS transistors
Author :
Carruthers, C. ; Mavor, J.
Author_Institution :
Algotronix Ltd., Technol. Transfer Centre, Edinburgh, UK
fDate :
6/1/1992 12:00:00 AM
Abstract :
The potential of deep-depletion MOS transistors for a low-noise, analogue signal-processing application is investigated in this paper. These are predicted to have a favourable noise performance, because a buried depletion layer in this transistor structure can be induced between its conduction channel and the SiO2-Si interface noise mechanisms, which dominate a surface-channel device. Measurements for n-channel depletion-mode MOS transistors formed on p -type ⟨100⟩ orientation silicon substrates are presented. Under certain bias conditions these devices exhibit a significant reduction in the low-frequency noise performance over conventional, surface-channel MOS structures. A BiCMOS cascode buffer circuit is proposed, which yields a favourable noise performance for infrared, focal-plane signal-processing applications
Keywords :
BIMOS integrated circuits; buffer circuits; electron device noise; insulated gate field effect transistors; ⟨100⟩ orientation; BiCMOS cascode buffer circuit; IR focal plane; MOS transistors; SiO2-Si; analogue signal-processing application; bias conditions; buried depletion layer; conduction channel; deep-depletion mode; focal-plane signal-processing; interface noise mechanisms; low-frequency noise; low-noise; n-channel; noise performance; p-type Si substrate;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
