DocumentCode :
820642
Title :
Radiation-Induced Defect Centers in Thermally Grown Oxide Films
Author :
Marquardt, C.L. ; Sigel, G.H.
Author_Institution :
Naval Research Laboratory Washington, D. C. 20375
Volume :
22
Issue :
6
fYear :
1975
Firstpage :
2234
Lastpage :
2239
Abstract :
Electron spin resonance and etch-back techniques have been employed to identify radiation-induced defect centers in thermally grown oxide films on SOS wafers and to determine their spatial distribution in the oxide film. The only defect identified was the E´ center, which was found to be indistinguishable from E´ centers in irradiated bulk fused silica samples. The distribution of E´ centers in-oxide films irradiated to a dose of 108 rad (Si) was observed to consist of a uniform bulk distribution plus a concentration build-up near the Si-SiO2 interface. The application of a positive 10 volt bias to a 1.08kÃ… gate oxide during gamma irradiation produced an order of magnitude increase in the E´ center concentration.
Keywords :
Capacitance-voltage characteristics; Charge measurement; Current measurement; Electrons; Extraterrestrial measurements; Laboratories; Paramagnetic resonance; Semiconductor films; Silicon compounds; Space charge;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1975.4328111
Filename :
4328111
Link To Document :
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