DocumentCode :
820661
Title :
Effect of Ionizing Radiation on Displacement Damage in Ion-Bmcbarded Single Crystal α-A12O3 and α-SiO2
Author :
Krefft, G.B. ; Beezhold, W. ; EerNisse, E.P.
Author_Institution :
Sandia Laboratories Albuquerque, New Mexico 87115
Volume :
22
Issue :
6
fYear :
1975
Firstpage :
2247
Lastpage :
2249
Abstract :
Volume changes in ion-bombarded single crystals of sapphire and α-quartz have been investigated as functions of ion mass and initial energy and of the energy partitioning into atomic and ionization processes. In addition, channeled proton-induced X-ray measurements were made of displacement damage after ion bombardment. Results indicate an ionization stimulated annealing effect of the radiation damage in sapphire which prevents this material from becoming amorphous even at high ion fluences. In contrast, α-quartz shows no such annealing effect and loses its crystallinity completely at high ion fluences.
Keywords :
Annealing; Atomic measurements; Compaction; Crystalline materials; Crystallization; Ionization; Ionizing radiation; Lattices; Stress measurement; Volume measurement;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1975.4328113
Filename :
4328113
Link To Document :
بازگشت