Title :
An Si-SiGe BiCMOS direct-conversion mixer with second-order and third-order nonlinearity cancellation for WCDMA applications
Author :
Sheng, Liwei ; Larson, Lawrence E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, La Jolla, CA, USA
Abstract :
This paper presents a general analysis of the third-order nonlinearity of a differential common-emitter RF amplifier and an improved technique to cancel the third-order nonlinearity. A thorough analysis of the mechanisms leading to the second-order nonlinearity of bipolar double-balanced active mixers is also presented. An SiGe BiCMOS WCDMA direct-conversion mixer is designed based on the third- and the second-order cancellation schemes. The mixer achieves +6-dBm third-order input intercept point, +49-dBm second-order input intercept point, 16-dB gain and 7.2-dB double-sideband noise figure with only 2.2-mA current at 2.1 GHz.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF integrated circuits; UHF mixers; code division multiple access; elemental semiconductors; integrated circuit design; nonlinear distortion; nonlinear network analysis; nonlinear network synthesis; semiconductor materials; silicon; 16 dB; 2.1 GHz; 2.2 mA; 7.2 dB; IIP2; IIP3; Si-SiGe; Si-SiGe BiCMOS direct-conversion mixer; WCDMA applications; bipolar double-balanced active mixers; common-emitter stages; differential common-emitter RF amplifier; differential-pair stages; second-order nonlinearity cancellation; third-order distortion; third-order nonlinearity cancellation; wideband CDMA; Acoustic distortion; Analog integrated circuits; BiCMOS integrated circuits; Linearity; Multiaccess communication; Nonlinear distortion; Radio frequency; Surface acoustic waves; Wireless LAN; Wireless communication;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2003.818586
