DocumentCode :
82077
Title :
Experimental Demonstration of Negative Index of Refraction in Magnetic Semiconductors
Author :
Ait-El-Aoud, Yassine ; Kussow, Adil-Gerai ; Jaradat, Hamzeh M. ; Akyurtlu, Alkim
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Massachusetts Lowell, Lowell, MA, USA
Volume :
3
Issue :
6
fYear :
2013
fDate :
Nov. 2013
Firstpage :
791
Lastpage :
797
Abstract :
Homogeneous negative index materials have been introduced as an alternative to conventional metamaterials designs. Based on direct experimental evidence, we demonstrate that the magnetic semiconductor, Cr-doped indium oxide, possesses a negative refractive index near 28.0 μm. This effect is based on the coexistence of the magnon mode with the plasmonic mode, with simultaneous negative permeability and permittivity responses. Thin films of In2-xCrxO3 are fabricated, and the magnetic measurements clearly demonstrate ferromagnetism with a high saturation magnetization and a Curie temperature which is much higher than room temperature. The refractive index is extracted from combined transmittance and reflectance data and is compared with the theoretical prediction. Moreover, a direct experimental method is used to demonstrate negative refraction in this material.
Keywords :
magnetic semiconductors; optical metamaterials; refractive index; conventional metamaterials designs; homogeneous negative index materials; magnetic semiconductors; magnon mode; negative index of refraction; negative permeability; negative refractive index; permittivity responses; Magnetic separation; Metamaterials; Refractive index; Semiconductor device measurement; Temperature measurement; Wavelength measurement; Chromium-doped indium oxide; magnetic semiconductor; metamaterials; mid-IR; negative index materials;
fLanguage :
English
Journal_Title :
Terahertz Science and Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-342X
Type :
jour
DOI :
10.1109/TTHZ.2013.2285554
Filename :
6656011
Link To Document :
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