Title :
Barrier-free direct-contact-via (DCV) structures for copper interconnects
Author :
Li, C.Y. ; Zhang, D.H. ; Wu, Jin Jei ; Su, S.S. ; Qian, Yi ; Koh, L. ; Foo, P.D.
Author_Institution :
Deep Submicron Circuit, Inst. of Microelectron., Singapore
fDate :
8/29/2002 12:00:00 AM
Abstract :
New barrier-free direct-contact-via (DCV) structures applicable to 0.18 μm integrated circuits have been developed based on step coverage of the Ta barrier and time-controlled plasma etching. The via resistance in the novel DCV structures could be reduced to 29%, while the breakdown voltage in the novel DCV structures can be enhanced to 150%
Keywords :
ULSI; VLSI; copper; integrated circuit interconnections; leakage currents; semiconductor device breakdown; sputter etching; tantalum; 0.18 micron; Cu; Cu interconnects; Ta; barrier-free direct contact via structures; breakdown electrical field; breakdown voltage enhancement; dual damascene structures; integrated circuits; ionised-metal plasma Ta barrier; leakage current; time-controlled plasma etching; via resistance reduction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020697
