Title :
Artificial dielectric devices for variable polarization compensation at millimeter and submillimeter wavelengths
Author :
Drysdale, Timothy D. ; Blaikie, Richard J. ; Chong, Harold M H ; Cumming, David R S
Author_Institution :
Nanostructure Eng. Sci. & Technol. Group, Univ. of Canterbury, Christchurch, New Zealand
Abstract :
Variable polarization compensation has been demonstrated at 100 GHz. The device consists of two interlocking V-groove artificial dielectric gratings that produce a birefringence that varies with the separation distance. A maximum retardance of 74° has been obtained experimentally in a silicon device, in good agreement with rigorous coupled-wave computer simulations. Further simulations predict that adding quarter wave dielectric antireflection (AR) coatings to the outer surfaces of the device can reduce the insertion loss to below 4 dB. The use of rectangular grooved gratings provides increased retardance and reduced loss. It is predicted that a coupled device with rectangular grooved gratings will be capable of maximum retardance in excess of 180°, with low insertion loss (<0.6 dB). The sensitivity of the wave retardation as a function of mechanical separation has a peak value of 485°/mm. The design and micromachining fabrication techniques scale for operation at submillimeter wavelengths.
Keywords :
anisotropic media; antireflection coatings; birefringence; dielectric devices; electromagnetic wave polarisation; micromachining; millimetre wave devices; submillimetre wave devices; 100 GHz; Si; V-groove gratings; anisotropic media; artificial dielectric gratings; birefringence; insertion loss; micromachining fabrication techniques; millimeter wave devices; quarter wave dielectric antireflection coatings; rectangular grooved gratings; retardance; silicon device; submillimeter wave devices; variable polarization compensation; wave retardation; Birefringence; Computational modeling; Computer simulation; Dielectric devices; Dielectric losses; Gratings; Insertion loss; Millimeter wave devices; Polarization; Silicon devices;
Journal_Title :
Antennas and Propagation, IEEE Transactions on
DOI :
10.1109/TAP.2003.818787