Title :
A Si-SiGe HBT dielectric-resonator-stabilized microstrip oscillator at X-band frequencies
Author :
Guttich, U. ; Gruhle, A. ; Luy, J.F.
Author_Institution :
Telefunken Systemtechnik, Ulm, Germany
fDate :
7/1/1992 12:00:00 AM
Abstract :
Design, fabrication and performance of the first reported hybrid dielectric resonator oscillator (DRO) using an Si-SiGe heterojunction bipolar transistor (HBT) as the active device are described. The HBT with layer structures completely grown by MBE exhibits f/sub T/ and f/sub max/ values in the range of 38 GHz. At 9.6 GHz, an oscillator output power of 10 mW with a conversion efficiency of 17.5% is measured. Phase noise N/C/sub FM/ of -85 dBc (1 Hz) is determined at 100 kHz off carrier.<>
Keywords :
Ge-Si alloys; dielectric resonators; elemental semiconductors; heterojunction bipolar transistors; hybrid integrated circuits; microwave integrated circuits; microwave oscillators; semiconductor materials; silicon; strip line components; 10 mW; 17.5 percent; 38 GHz; 9.6 GHz; DR stabilised oscillator; DRO; HBT; MBE; SHF; Si-SiGe; X-band frequencies; conversion efficiency; dielectric resonator oscillator; heterojunction bipolar transistor; hybrid MIC; microstrip oscillator; Circuits; Dielectrics; Frequency; Heterojunction bipolar transistors; Microstrip resonators; Microwave oscillators; Molecular beam epitaxial growth; Scattering parameters; Silicon on insulator technology; Substrates;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
