A Si-SiGe HBT dielectric-resonator-stabilized microstrip oscillator at X-band frequencies

Author

Guttich, U. ; Gruhle, A. ; Luy, J.F.

Author_Institution

Telefunken Systemtechnik, Ulm, Germany

Volume

2

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

281

Lastpage

283

Abstract

Design, fabrication and performance of the first reported hybrid dielectric resonator oscillator (DRO) using an Si-SiGe heterojunction bipolar transistor (HBT) as the active device are described. The HBT with layer structures completely grown by MBE exhibits f/sub T/ and f/sub max/ values in the range of 38 GHz. At 9.6 GHz, an oscillator output power of 10 mW with a conversion efficiency of 17.5% is measured. Phase noise N/C/sub FM/ of -85 dBc (1 Hz) is determined at 100 kHz off carrier.<>

Keywords

Ge-Si alloys; dielectric resonators; elemental semiconductors; heterojunction bipolar transistors; hybrid integrated circuits; microwave integrated circuits; microwave oscillators; semiconductor materials; silicon; strip line components; 10 mW; 17.5 percent; 38 GHz; 9.6 GHz; DR stabilised oscillator; DRO; HBT; MBE; SHF; Si-SiGe; X-band frequencies; conversion efficiency; dielectric resonator oscillator; heterojunction bipolar transistor; hybrid MIC; microstrip oscillator; Circuits; Dielectrics; Frequency; Heterojunction bipolar transistors; Microstrip resonators; Microwave oscillators; Molecular beam epitaxial growth; Scattering parameters; Silicon on insulator technology; Substrates;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.143395

Filename

143395