Microcavity vacuum-field configuration and the spontaneous emission power

Author

Zhang, T. ; Wohlbier, J.G. ; Choquette, Kent D. ; Tabatabaie, N.

Author_Institution

Wisconsin Univ., Madison, WI, USA

Volume

1

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

606

Lastpage

615

Abstract

The axial and lateral spontaneous emission intensities from vertical-cavity laser diodes have been studied both experimentally and theoretically. The measurements show that spontaneous emission from the cavity perimeter (lateral emission) is overwhelmingly larger than the same emanating along the lasing direction (axial emission). A model for lateral and axial spontaneous emission from microcavities is postulated based on one- and two-dimensional vacuum electromagnetic field confinement, respectively. A new cavity mode counting technique is developed and utilized to calculate the spontaneous emission initio. The resulting field configuration theory is in good agreement with the emission intensity measurements

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; laser modes; semiconductor lasers; spontaneous emission; surface emitting lasers; AlGaAs; axial emission; cavity mode counting technique; cavity perimeter; emission intensity measurements; field configuration theory; lasing direction; lateral emission; microcavity vacuum-field configuration; spontaneous emission power; vacuum electromagnetic field confinement; vertical-cavity laser diodes; Diode lasers; Electromagnetic fields; Electromagnetic measurements; Electromagnetic modeling; Laser modes; Laser theory; Microcavities; Semiconductor lasers; Spontaneous emission; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.401248

Filename

401248