A Fully Integrated CMOS Active Bandpass Filter for Multiband RF Front-Ends

Author

Gao, Zhiqiang ; Ma, Jianguo ; Yu, Mingyan ; Ye, Yizheng

Author_Institution

Microelectron. Center, Harbin Inst. of Technol., Harbin

Volume

55

Issue

8

fYear

2008

Firstpage

718

Lastpage

722

Abstract

In this paper, design techniques for an integrated RF bandpass filter are discussed. A novel wide-tuning high-Q active bandpass filter utilizing the active inductors is presented. Issues of the active inductor related to Q -enhancement, noise, linearity, and stability are considered. The circuit has been fabricated in an 0.18-mum CMOS process, and the filter occupies the active area of 150 times 200 mum². Measurement results show that the filter centered at 3.82 GHz with about 36-MHz bandwidth (3-dB) is tunable in frequency from about 1.92 to 3.82 GHz, and it exhibits -15- to 1-dB compression point at 2.44 GHz with approximately 60-MHz bandwidth while the dc power consumes 10.8 mW.

Keywords

CMOS integrated circuits; UHF filters; UHF integrated circuits; active filters; band-pass filters; field effect MMIC; inductors; microwave filters; transceivers; CMOS active bandpass filter; Q-enhancement; active inductors; bandwidth 36 MHz; bandwidth 60 MHz; frequency 1.92 GHz to 3.82 GHz; multiband RF front-ends; power 10.8 mW; wide-tuning high-Q active bandpass filter; $Q$ -enhancement; Active bandpass filters; active inductors; multiband RF front-ends; stability;

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2008.922392

Filename

4584436