DocumentCode
821159
Title
Si/SiGe n-channel modulation-doped field effect transistor on air
Author
Li, S.M. ; Fobelets, K.
Author_Institution
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
Volume
38
Issue
18
fYear
2002
fDate
8/29/2002 12:00:00 AM
Firstpage
1064
Lastpage
1065
Abstract
Si/SiGe n-channel modulation-doped field effect transistors (MODFETs) have been fabricated on a 10 μm-thick membrane by removal of the Si substrate and SiGe virtual substrate under the device layers. The membrane devices, surrounded by air, were characterised after thinning and compared to the unthinned characteristics. A large reduction of the off-currents of the MODFETs on air, due to an increase in substrate resistance, has been measured, making them more suitable for low-power applications
Keywords
Ge-Si alloys; elemental semiconductors; high electron mobility transistors; leakage currents; low-power electronics; membranes; micromachining; silicon; 10 μm-thick membrane; 10 micron; DC characteristics; Si substrate removal; Si-SiGe; Si/SiGe n-channel MODFETs; SiGe virtual substrate removal; air; low-power applications; membrane devices; micro-machining-based technique; off-current reduction; substrate leakage current; substrate resistance; thinning; transfer characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020706
Filename
1033276
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