Title :
Si/SiGe n-channel modulation-doped field effect transistor on air
Author :
Li, S.M. ; Fobelets, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
fDate :
8/29/2002 12:00:00 AM
Abstract :
Si/SiGe n-channel modulation-doped field effect transistors (MODFETs) have been fabricated on a 10 μm-thick membrane by removal of the Si substrate and SiGe virtual substrate under the device layers. The membrane devices, surrounded by air, were characterised after thinning and compared to the unthinned characteristics. A large reduction of the off-currents of the MODFETs on air, due to an increase in substrate resistance, has been measured, making them more suitable for low-power applications
Keywords :
Ge-Si alloys; elemental semiconductors; high electron mobility transistors; leakage currents; low-power electronics; membranes; micromachining; silicon; 10 μm-thick membrane; 10 micron; DC characteristics; Si substrate removal; Si-SiGe; Si/SiGe n-channel MODFETs; SiGe virtual substrate removal; air; low-power applications; membrane devices; micro-machining-based technique; off-current reduction; substrate leakage current; substrate resistance; thinning; transfer characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020706
