A K-band InGaP/GaAs HBT balanced MMIC VCO

Author

Kim, Jeong-Geun ; Baek, Dong-hyun ; Jeon, Sanghoon ; Park, Jae-Woo ; Hong, Songcheol

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., South Korea

Volume

13

Issue

11

fYear

2003

Firstpage

478

Lastpage

480

Abstract

A fully integrated K-band balanced voltage controlled oscillator (VCO) is presented. The VCO is realized using a commercially available InGaP/GaAs heterojunction bipolar transistor (HBT) technology with an f/sub T/ of 60 GHz and an f/sub MAX/ of 110 GHz. To generate negative resistance at mm-wave frequencies, common base inductive feedback topology is used. The VCO provides an oscillation frequency from 21.90 GHz to 22.33 GHz. The frequency tuning range is about 430 MHz. The peak output power is -0.3 dBm. The phase noise is -108.2 dBc/Hz at 1 MHz offset at an operating frequency of 22.33 GHz. The chip area is 0.84/spl times/1.00 mm/sup 2/.

Keywords

III-V semiconductors; MMIC oscillators; bipolar MMIC; feedback oscillators; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit noise; millimetre wave oscillators; negative resistance circuits; network topology; phase noise; voltage-controlled oscillators; 110 GHz; 21.90 to 22.33 GHz; 60 GHz; InGaP-GaAs; InGaP/GaAs heterojunction bipolar transistor technology; K-band InGaP/GaAs HBT balanced MMIC VCO; balanced topology; chip area; common base inductive feedback topology; frequency tuning range; fully integrated K-band balanced voltage controlled oscillator; mm-wave frequency; negative resistance generation; oscillation frequency; peak output power; phase noise; Frequency; Gallium arsenide; Heterojunction bipolar transistors; K-band; MMICs; Negative feedback; Power generation; Topology; Tuning; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2003.818530

Filename

1243537