Title :
Performance evaluation of a Schottky SiC power diode in a boost PFC application
Author :
Spiazzi, Giorgio ; Buso, Simone ; Citron, Massimiliano ; Corradin, Michele ; Pierobon, Roberto
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Italy
Abstract :
The performance of a 600 V, 4 A silicon carbide (SiC) Schottky diode (Infineon SDP04S60) is experimentally evaluated. A 300 W boost power factor corrector (PFC) with average current mode control is considered as a key application. Measurements of overall efficiency, switch and diode losses, and conducted electromagnetic interference (EMI) are performed both with the SiC diode and with two ultra-fast, soft-recovery, silicon power diodes, namely the RURD460 and the presented STTH5R06D. The paper compares the results to quantify the impact of the recovery current reduction provided by SiC diode on these key aspects of the converter behavior. Based on the experimental results, the paper shows that the use of SiC diodes in PFC designs may only be justified in high switching frequency applications.
Keywords :
Schottky diodes; electric current control; electromagnetic interference; losses; power convertors; power factor correction; power semiconductor switches; silicon compounds; 300 W; 600 V; Infineon SDP04S60; RURD460; STTH5R06D; Schottky SiC power diode; SiC; average current mode control; boost PFC application; boost power factor corrector; conducted EMI; conducted electromagnetic interference; converter behavior; diode losses; high switching frequency applications; overall efficiency measurement; recovery current reduction; silicon carbide; switch losses; ultra-fast soft-recovery silicon power diodes; Electromagnetic interference; Electromagnetic measurements; Loss measurement; Magnetic losses; Performance evaluation; Power measurement; Reactive power; Schottky diodes; Silicon carbide; Switches;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2003.818821
