Properties of Fully Decoded 256 Bit PMNOS/PMOS/SOS/AL-GATE Memory in Radiation Environment

Tests were conducted to characterize a fully decoded 256 bit PMNOS memory in a nuclear environment, These tests were as follows: (1) transient photo-current tests using 20 ns and 100 ns electron pulses from the AFCRL Linac, (2) transient annealing tests using 4,5 ¿s electron pulses from the same Linac and also 365 ¿s to 2.5 ms gamma pulses from the Aberdeen Pulse Reactor with doses up to 6 ¿ 104 rads (Si) and neutron fluences up to 2.6 x 1013n/cm2 pulse, (3) survivability tests using 20 ns gamma pulse from the AFCRL Flash X-ray, and (4) total dose using Cobalt-60 source at ECOM, Evans Laboratory. The results show that predictions of failure levels based on measurement made on the elementary devices are reasonably accurate. In addition, the results show that total does hardness levels of 3 ¿ 105 rads (Si) can be achieved without the use of hardened insulators. Most of the various failure levels were determined by the PMOS radiation effects.