DocumentCode
821325
Title
CMOS 2D Hall microsensor with minimal design complexity
Author
Roumenin, Ch.S. ; Lozanova, S.V.
Author_Institution
Inst. of Control & Syst. Res., Bulgarian Acad. of Sci., Sofia
Volume
43
Issue
9
fYear
2007
Firstpage
511
Lastpage
513
Abstract
A new silicon integrated 2D Hall sensor for high-accuracy magnetic-field in-plane vector measurements fabricated through a CMOS technology, has been suggested and tested. Its unique advantage is minimal design complexity: only four external connections, lack of cross-sensitivity between the channels and very high resolution. In addition, a simple, but highly effective circuitry fully compensates for the offsets and the nonlinear magnetoresistance of the two outputs
Keywords
CMOS integrated circuits; Hall effect transducers; magnetic field measurement; magnetic sensors; magnetoresistance; microsensors; CMOS 2D Hall microsensor; high-accuracy measurements; magnetic-field in-plane vector measurements; minimal design complexity; nonlinear magnetoresistance; silicon integrated 2D Hall sensor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20070784
Filename
4168487
Link To Document