DocumentCode
821350
Title
Fabrication and application of MOS-HBT-NDR circuit using standard SiGe process
Author
Gan, K.J. ; Tsai, C.-S. ; Sun, W.-L.
Author_Institution
Dept. of Electron. Eng., Kun Shan Univ., Taiwan
Volume
43
Issue
9
fYear
2007
Firstpage
517
Lastpage
517
Abstract
A novel negative differential resistance (NDR) circuit made of a metal-oxide-semiconductor field-effect-transistor (MOS) and a heterojunction bipolar transistor (HBT) is presented. By suitably modulating the width/length parameters of the MOS devices, the fabrication of this MOS-HBT-NDR circuit and its application to inverter design based on the standard 0.35 mum SiGe process was demonstrated
Keywords
Ge-Si alloys; MOS integrated circuits; bipolar integrated circuits; invertors; MOS-HBT-NDR circuit; SiGe; SiGe process; fabrication; heterejunction bipolar transistor; inverter design; metal-oxide-semiconductor field-effect-transistor; negative differential resistance circuit; standard SiGe process;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20070039
Filename
4168490
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