Multiple-wavelength vertical cavity laser arrays on patterned substrates

Author

Eng, Lars E. ; Bacher, Kenneth ; Yuen, Wupen ; Harris, James S., Jr. ; Chang-Hasnain, Constance J.

Author_Institution

Edward L. Ginzton Lab., Stanford Univ., CA, USA

Volume

1

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

624

Lastpage

628

Abstract

We demonstrate a spatially chirped resonant wavelength in vertical cavities and vertical cavity surface emitting lasers (VCSEL´s) grown by Molecular Beam Epitaxy. The wavelength shift is achieved by varying the GaAs growth rate across the wafer using a patterned backing substrate to induce a lateral temperature profile. Temperature patterns transfer to thickness patterns with a resolution on the millimeter scale. We demonstrate 8-nm periodic cavity mode shifts in GaAs-AlAs Fabry-Perot vertical cavities, and a 20-nm shift in lasing wavelength in a VCSEL array

Keywords

Fabry-Perot resonators; III-V semiconductors; aluminium compounds; chirp modulation; gallium arsenide; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; semiconductor laser arrays; surface emitting lasers; GaAs growth rate; GaAs-AlAs; GaAs-AlAs Fabry-Perot vertical cavities; VCSEL array; lasing wavelength; lateral temperature profile; millimeter scale resolution; molecular beam epitaxy; patterned backing substrate; patterned substrates; periodic cavity mode shifts; spatially chirped resonant wavelength; temperature patterns; thickness patterns; vertical cavities; vertical cavity surface emitting lasers; wavelength shift; Chirp; Gallium arsenide; Laser modes; Molecular beam epitaxial growth; Optical arrays; Resonance; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.401250

Filename

401250