Title :
Room-temperature InAs=AlSb quantum-cascade laser operating at 8.9 μm
Author :
Ohtani, K. ; Fujita, K. ; Ohno, H.
Author_Institution :
Lab. for Nanoelectronics & Semicond. Spintronics, Tohoku Univ., Aoba
Abstract :
A room-temperature InAs/AlSb quantum-cascade laser operating at 8.9 mum is reported. The laser structure is grown on an n-InAs (100) substrate by solid-source molecular-beam epitaxy. The active region utilises a diagonal intersubband transition in an InAs/AlSb three-quantum-well structure. Observed threshold current density in pulse mode is 2.6 kA/cm2 at 80 K and 12.0 kA/cm2 at 300 K. The maximum operation temperature is 305 K
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; quantum cascade lasers; semiconductor epitaxial layers; wide band gap semiconductors; 300 K; 305 K; 8.9 micron; 80 K; InAs-AlSb; n-InAs (100) substrate; quantum-cascade laser; quantum-well structure; room-temperature; solid-source molecular-beam epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070251
