The Effect of Radiation Damage on the Noise Performance of Fet´s

The gate noise from radiation induced defects in MOSFET´s and JFET´s has been studied for 24.8 MeV electron irradiations up to about 1 x 1016 e/cm2. The flicker noise increase induced in JFET´s has been interpreted as due to the defect generation and recombination centers induced by radiation damage within the depletion layer. Finally, it is shown that the noise performance of JFET´s is well applicable for high-intensity and high-level radiation detection.