Title :
Dosimetry of Gamma-Irradiated Semiconductor Devices
Author :
Barry, Albert L.
Author_Institution :
Department of Communications Communications Research Centre Ottawa, Canada, K2H 8S2
Keywords :
Absorption; Dielectric materials; Dosimetry; Gallium arsenide; Gamma rays; Measurement units; Radiation effects; Semiconductor devices; Semiconductor materials; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1975.4328193
