Title :
Single-mode, passive antiguide vertical cavity surface emitting laser
Author :
Wu, Y.A. ; Li, G.S. ; Nabiev, R.F. ; Choquette, Kent D. ; Caneau, C. ; Chang-Hasnain, C.J.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
We report the characteristics of a single-mode, low threshold, passive antiguide region (PAR) vertical cavity surface emitting laser (VCSEL) using both organometallic chemical vapor deposition (OMCVD) and molecular beam epitaxy (MBE) for the regrowth of the PAR structure. The novel passive antiguide region surrounding the active region is demonstrated to be a highly effective transverse mode and polarization mode selection mechanism. A stable single fundamental mode at high currents has been achieved experimentally for laser aperture as large as 16 μm diameter, In addition, very low threshold current of 0.8 mA and current density of 490 A/cm2 are achieved with 8 and 32 μm diameter VCSEL´s, respectively. A detailed numerical two- and three-dimensionaI analysis was performed using the beam propagation method. The modal losses were calculated as a function of the cladding refractive index and the laser size. Quantitative results leading to approximate formulae have been achieved. The high mode selectivity obtained from the numerical analysis is in good agreement with the experimental results we have achieved
Keywords :
laser cavity resonators; laser modes; molecular beam epitaxial growth; optical fabrication; optical losses; quantum well lasers; refractive index; surface emitting lasers; vapour phase epitaxial growth; 0.8 mA; 16 mum; 32 mum; VCSEL; active region; beam propagation method; cladding refractive index; current density; fundamental mode; laser aperture; laser size; low threshold laser; modal losses; molecular beam epitaxy; organometallic chemical vapor deposition; passive antiguide region; passive antiguide vertical cavity surface emitting laser; polarization mode selection mechanism; regrowth; single-mode laser; three-dimensionaI analysis; threshold current; transverse mode; two-dimensionaI analysis; vertical cavity surface emitting laser; Apertures; Chemical lasers; Chemical vapor deposition; Laser modes; Laser stability; Molecular beam epitaxial growth; Polarization; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.401251