Title :
180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm
Author :
Hill, R.J.W. ; Moran, D.A.J. ; Li, X. ; Zhou, H. ; Macintyre, D. ; Thoms, S. ; Droopad, R. ; Passlack, M. ; Thayne, I.G.
Author_Institution :
Nanoelectronics Res. Centre, Univ. of Glasgow
Abstract :
Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron metrics are the best values reported to date for III-V MOSFETs, and indicate their potential for scaling to deca-nanometre dimensions
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; high-k dielectric thin films; 180 nm; GaAs; III-V MOSFET; deca-nanometre dimensions; drive current; extrinsic transconductance; gate leakage; high-k dielectric; implant-free architecture; metal gate; n-MOSFET; on resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070427
