Title :
Hybrid nanocrystal FinFET with large P/E window for MLC NAND Flash memory application
Author :
Choe, J.-D. ; Ahn, Y.J. ; Lee, S.-H. ; Jang, D. ; Yoon, Y.-B. ; Lee, J.J. ; Chung, I. ; Park, D. ; Park, DaeLim
Author_Institution :
Adv. Technol. Dev. Team, Samsung Electron. Co., Yongin-City Kyungki-Do
Abstract :
The engineered trap layer with nanocrystal and high-k blocking oxide are applied to the FinFET structure. The increased trap density of the hybrid nanocrystal trap layer and the enhanced leakage reduction of AlxOy are proposed as a dominant role of the larger program and erase window of 8.3 V which is applicable to the MLC Flash memory device
Keywords :
MOSFET; flash memories; nanostructured materials; 8.3 V; AlO; enhanced leakage reduction; flash memory application; high-k blocking oxide; hybrid nanocrystal FinFET; trap density; trap layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070605
