DocumentCode
821790
Title
A subthreshold MOS neuron circuit based on the Volterra system
Author
Asai, Tetsuya ; Kanazawa, Yusuke ; Amemiya, Yoshihito
Author_Institution
Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan
Volume
14
Issue
5
fYear
2003
Firstpage
1308
Lastpage
1312
Abstract
We present an analog neuron circuit consisting of a small number of metal-oxide semiconductor (MOS) devices operating in their subthreshold region. The dynamics of the circuit were designed to be equivalent to the well-known Volterra system to facilitate developing the circuit for a particular application. We show that a simple nonlinear transformation of system variables in the Volterra system enables designing a neuron-like oscillator, which can produce sequences in time of identically shaped pulses (spikes) by using current-mode subthreshold MOS circuits. We present experimental results of the fabricated neuron circuits as well as an application in an inhibitory neural network, where the neurons compete with each other in the frequency and time domains.
Keywords
MOS analogue integrated circuits; Volterra equations; current-mode circuits; neural chips; threshold logic; Volterra system; analog neuron circuit; current-mode subthreshold MOS circuits; experimental results; frequency domains; inhibitory neural network; metal-oxide semiconductor devices; neuron-like oscillator; nonlinear transformation; subthreshold MOS neuron circuit; subthreshold region; time domains; Biological neural networks; Biomembranes; Circuit simulation; Computational modeling; Computer networks; Computer simulation; MOS devices; Neurons; Nonlinear dynamical systems; Very large scale integration;
fLanguage
English
Journal_Title
Neural Networks, IEEE Transactions on
Publisher
ieee
ISSN
1045-9227
Type
jour
DOI
10.1109/TNN.2003.816357
Filename
1243729
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