Title :
In0.53Ga0.47As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Utilizing Y2O3 Buried Oxide
Author :
Sang Hyeon Kim ; Dae-Myeong Geum ; Min-Su Park ; Won Jun Choi
Author_Institution :
Center for Optoelectron. Mater. & Devices, Korea Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
In this letter, we have investigated electrical properties of metal-oxide-semiconductor (MOS) gate stack of Pt/Y2O3/In0.53Ga0.47As under different annealing conditions. We have found that proper annealing step significantly improves MOS interfacial properties of Pt/Y2O3/In0.53Ga0.47As MOS capacitors. Finally, we have realized MOS interface with a low density of trap state (Dit) of 4 × 1012 eV-1 · cm-2 and hysteresis of 15 mV using postmetallization annealing at 350°C. Furthermore, we also first demonstrated In0.53Ga0.47As-on-insulator (-OI) transistors with Y2O3 buried oxide layer using developed MOS interface. Fabricated In0.53Ga0.47As-OI transistors show good I-V characteristics and high peak mobility of ~2000 cm2/Vs.
Keywords :
III-V semiconductors; MOS capacitors; MOSFET; annealing; gallium arsenide; indium compounds; platinum; wide band gap semiconductors; yttrium compounds; I-V characteristics; MOS capacitors; MOSFET; OI transistors; Pt-Y2O3-In0.53Ga0.47As; buried oxide; electrical properties; gate stack; interfacial properties; metal-oxide-semiconductor field-effect transistors; on-insulator transistors; postmetallization annealing; temperature 350 degC; trap state; voltage 15 mV; Annealing; Hysteresis; Logic gates; MOSFET; Silicon; Substrates; III-V MOSFETs; III-V compound semiconductor; InGaAs; InGaAs MOSFETs; InGaAs-OI; MOSFETs; Wafer bonding; wafer bonding;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2417872
