Title :
Polarization control of vertical-cavity surface emitting lasers using a birefringent metal/dielectric polarizer loaded on top distributed Bragg reflector
Author :
Mukaihara, Toshikazu ; Ohnoki, Noriyuki ; Hayashi, Yukio ; Hatori, Nobuaki ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
A novel polarization control method using a birefringent metal/dielectric (semiconductor) polarizer has been proposed for the purpose of controlling the polarization state of vertical-cavity surface-emitting lasers (VCSEL´s). The proposed structure provides a phase difference for two orthogonal polarization states, resulting in reasonably large reflectivity difference in two polarizations. We have experimentally demonstrated the polarization control InGaAs-GaAs VCSEL´s while maintaining a low threshold current density of 660 A/cm2. A predominant polarization state along the designed orientation is obtained up to two times the threshold
Keywords :
III-V semiconductors; birefringence; current density; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser accessories; laser cavity resonators; optical polarisers; reflectivity; semiconductor lasers; surface emitting lasers; InGaAs-GaAs; birefringent metal/dielectric polarizer; designed orientation; distributed Bragg reflector; phase difference; polarization control method; polarization state; reflectivity difference; threshold current density; vertical-cavity surface emitting lasers; Anisotropic magnetoresistance; Birefringence; Distributed Bragg reflectors; Molecular beam epitaxial growth; Optical control; Optical fiber polarization; Optical polarization; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.401256