Measurement of the interface trap and dielectric charge density in high-κ gate stacks

We demonstrate an accurate measurement of the interface trap density and the stress-induced dielectric charge density in Si/high-κ gate dielectric stacks of metal-oxide-semiconductor field-effect transistors (MOSFETs) using the direct-current current-voltage (DCIV) technique. The capture cross section and density of the interface traps in the high-κ gate stack were found to be similar to those of the Si/SiO₂ interface. A constant-voltage stress of the p-channel MOSFET in inversion is shown to result in a negative dielectric charging and an increase in the interface trap density.