DocumentCode :
822184
Title :
Analysis and modeling of LC oscillator reliability
Author :
Sadat, Anwar ; Liu, Yi ; Yu, Chuanzhao ; Yuan, Jiann S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
Volume :
5
Issue :
1
fYear :
2005
fDate :
3/1/2005 12:00:00 AM
Firstpage :
119
Lastpage :
126
Abstract :
In this paper, MOS device degradations due to hot carrier and gate oxide breakdown are shown experimentally, and their effects on the NMOS LC oscillator have been evaluated analytically and through SpectreRF simulation. The reduction in transconductance of the differential pair transistors may cause the oscillation to cease. The amplitude of oscillation reduces as the equivalent tank resistance decreases due to the breakdown effect on the MOS varactor. The reduction of amplitude reduces the tank capacitances, and therefore shifts the frequency of oscillation and increases the oscillator phase noise. The tank amplitude of the oscillator is derived analytically. A closed-form expression for the average capacitance of the varactor that accounts for large-signal effects is presented. Finally, a set of guidelines to design an LC oscillator in reliability is presented.
Keywords :
MOS integrated circuits; hot carriers; oscillators; reliability; varactors; LC oscillator reliability; MOS device degradation; MOS varactor; NMOS LC oscillator; SpectreRF simulation; differential pair transistors; gate oxide breakdown; hot carrier; oscillator phase noise; Analytical models; Capacitance; Degradation; Electric breakdown; Frequency; Hot carriers; MOS devices; Oscillators; Transconductance; Varactors; Amplitude of oscillation; MOS varactor; gate oxide breakdown; hot carriers;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2005.843831
Filename :
1435395
Link To Document :
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