Title :
Damage mechanisms in impact-ionization-induced mixed-mode reliability degradation of SiGe HBTs
Author :
Zhu, Chendong ; Liang, Qingqing ; Al-Huq, Ragad Amin ; Cressler, John D. ; Lu, Yuan ; Chen, Tianbing ; Joseph, Alvin J. ; Niu, Guofu
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
3/1/2005 12:00:00 AM
Abstract :
A robust, time-dependent methodology is used to investigate impact-ionization-induced mixed-mode reliability stress (the simultaneous application of high JE and high VCB) in advanced SiGe HBTs. We present comprehensive stress data on second-generation 120-GHz SiGe HBTs, and use specially designed test structures with variable emitter-to-shallow trench spacing to shed light on the resultant damage mechanisms. We also explore the impact of mixed-mode stress on low frequency noise, ac performance, high-temperature device characteristics, and employ two-dimensional calibrated MEDICI simulations using the hot carrier injection current technique to better understand the physical damage locations.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; impact ionisation; millimetre wave bipolar transistors; semiconductor device reliability; 120 GHz; SiGe; damage mechanisms; heterojunction bipolar transistor; hot carrier damage; hot carrier injection current technique; impact-ionization-induced mixed-mode reliability degradation; mixed-mode stress; two-dimensional calibrated MEDICI simulation; variable emitter-to-shallow trench spacing; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Hot carriers; Impact ionization; Isolation technology; Low-frequency noise; Silicon germanium; Stress; Testing; Heterojunction bipolar transistor; hot carrier damage; impact ionization; mixed-mode stress; reliability; silicon-germanium;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2005.843835
