DocumentCode :
822239
Title :
Reliability improvement of rapid thermal oxide using gas switching
Author :
Lee, Min Hung ; Yu, Cheng-Ya ; Yuan, Fon ; Chen, K.-F. ; Lai, Chang-Chi ; Liu, Chee Wee
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
16
Issue :
4
fYear :
2003
Firstpage :
656
Lastpage :
659
Abstract :
The instantaneous switch-off of the gas precursors during the ramp-down cycle in a spike ramp process is demonstrated to be an effective method to enhance the reliability of rapid thermal oxide. Due to the slow ramp-down rate (60°C-90°C/s) of a rapid thermal process, the oxidation during the slow ramp-down cycle may produce the inferior oxide, especially for ultrathin oxide. To avoid the oxidation in the slow ramp-down cycle, the oxidation precursor (oxygen) is switched off during the ramp-down cycle. The reliability of resulting oxide without oxidation during the ramp-down cycle is enhanced as compared with the conventional oxide, which is still oxidized during the ramp-down cycle.
Keywords :
MIS devices; oxidation; rapid thermal processing; semiconductor device reliability; semiconductor diodes; 250 mbar; NMOS diode; Si-SiO2; gas switching; instantaneous gas precursor switch-off; interface quality; interface state density; oxidation time control; ramp-down cycle; rapid thermal oxidation; rapid thermal processor; reliability; spike ramp process; ultrathin oxide; Cooling; Helium; Interface states; Lamps; MOS devices; Oxidation; Rapid thermal processing; Switches; Thermal stresses; Weight control;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2003.818982
Filename :
1243979
Link To Document :
بازگشت