Title :
Spin reorientation in Tm2.14Bi0.80Pb0.06 Fe3.1Ga1.9O12 thin films
Author :
Bornfreund, Richard E. ; Khan, Debi C. ; Wigen, Philip E. ; Pardavi-Horvath, Martha ; Ings, John ; Belt, Roger
Author_Institution :
Dept. of Phys., Ohio State Univ., Columbus, OH, USA
fDate :
9/1/1992 12:00:00 AM
Abstract :
A single-crystal garnet thin film has been found to undergo a continuous reorientation of its easy direction of magnetization from in-plane to perpendicular to the plane over a temperature range of 100 K to 125 K. The temperature range was determined by following the temperature dependence of the remanent magnetization in zero magnetic field. The existence of a significant uniaxial anisotropy is evidenced by the inability to saturate the sample in both directions at 3 kG. A model has been proposed that explains the phenomena by considering the existence of a uniaxial anisotropy energy to fourth order. The model successfully predicts a second-order phase transition taking place for the appropriate temperature dependence of the anisotropy constants
Keywords :
bismuth compounds; garnets; lead compounds; magnetic anisotropy; magnetic thin films; magnetic transitions; remanence; spin dynamics; thulium compounds; 100 to 125 K; Tm2.14Bi0.8Pb0.06Fe3.1 Ga1.9O12 films; TmBiPbFe5O12Ga5O12; TmBiPbIGGG; magnetic films; magneto-optical materials; model; remanent magnetization; second-order phase transition; single-crystal garnet thin film; spin reorientation; temperature dependence; uniaxial anisotropy; zero magnetic field; Bismuth; Garnets; Iron; Magnetic field measurement; Magnetic materials; Magnetic moments; Magnetization; Temperature dependence; Temperature distribution; Transistors;
Journal_Title :
Magnetics, IEEE Transactions on
