DocumentCode
822407
Title
24 GHz low-noise amplifier in 0.18 μm CMOS technology
Author
Yu, K.-W. ; Lu, Y.-L. ; Huang, D. ; Chang, D.-C. ; Liang, V. ; Chang, M.F.
Author_Institution
Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
Volume
39
Issue
22
fYear
2003
Firstpage
1559
Lastpage
1560
Abstract
A 24 GHz monolithic low-noise amplifier (LNA) is implemented in a standard 0.18 μm CMOS technology. Measurements show a gain of 12.86 dB and a noise figure of 5.6 dB at 23.5 GHz. The input and output return losses are better than 11 dB and 22 dB across the 22-29 GHz span, respectively. The operation frequency of 24 GHz is believed to be the highest reported for LNA in a standard CMOS technology.
Keywords
CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; losses; 0.18 micron; 11 dB; 12.86 dB; 22 dB; 22 to 29 GHz; 24 GHz; 5.6 dB; CMOS technology; low-noise amplifier; operation frequency; return losses;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20031042
Filename
1244070
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