Title :
24 GHz low-noise amplifier in 0.18 μm CMOS technology
Author :
Yu, K.-W. ; Lu, Y.-L. ; Huang, D. ; Chang, D.-C. ; Liang, V. ; Chang, M.F.
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
Abstract :
A 24 GHz monolithic low-noise amplifier (LNA) is implemented in a standard 0.18 μm CMOS technology. Measurements show a gain of 12.86 dB and a noise figure of 5.6 dB at 23.5 GHz. The input and output return losses are better than 11 dB and 22 dB across the 22-29 GHz span, respectively. The operation frequency of 24 GHz is believed to be the highest reported for LNA in a standard CMOS technology.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; losses; 0.18 micron; 11 dB; 12.86 dB; 22 dB; 22 to 29 GHz; 24 GHz; 5.6 dB; CMOS technology; low-noise amplifier; operation frequency; return losses;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031042
