Title :
Loss calculations in transistorized parallel resonant converters operating above resonance
Author :
Bhat, A.K.S. ; Swamy, Mahesh M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
fDate :
10/1/1989 12:00:00 AM
Abstract :
The optimum operating point under certain constraints for a parallel resonant converter (PRC) operating above resonance is obtained. A systematic way to calculate losses in a PRC operating above resonance is presented and illustrated for bipolar and MOS power transistor switches. Experimental results obtained with prototype converters employing the above devices are given to support the theory. Both theory and experiments show that MOSFETs are better switching devices at a power level of about 1 kW
Keywords :
bipolar transistor circuits; field effect transistor circuits; losses; power convertors; power transistors; semiconductor switches; 1 kW; MOSFETs; bipolar transistors; losses; optimum operating point; parallel resonant converters; power convertors; power transistor switches; resonance; switching devices; Hafnium; Inductors; MOSFETs; Partial response channels; Power transistors; Resonance; Resonant inverters; Snubbers; Switches; Thyristors;
Journal_Title :
Power Electronics, IEEE Transactions on
