A new empirical large-signal HEMT model

Author

Shirakawa, Kazuo ; Shimizu, Masahiko ; Kawasaki, Yosihiro ; Ohashi, Yoji ; Okubo, Naofumi

Author_Institution

Fujitsu Labs. Ltd., Kawasaki, Japan

Volume

44

Issue

4

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

622

Lastpage

624

Abstract

We propose an empirical large-signal model of high electron mobility transistors (HEMTs). The bias-dependent data of small-signal equivalent circuit elements are obtained from S-parameters measured at various bias settings. And C_gs, C_gd, g_m, and g_ds, are described as functions of V_gs and V_ds. We included our large-signal model in a commercially available circuit simulator as a user-defined model and designed a 30/60-GHz frequency doubler. The fabricated doubler´s characteristics agreed well with the design calculations

Keywords

S-parameters; equivalent circuits; frequency multipliers; high electron mobility transistors; millimetre wave field effect transistors; millimetre wave frequency convertors; semiconductor device models; 60 GHz; HEMT; S-parameters; circuit simulator; equivalent circuit; frequency doubler; high electron mobility transistor; large-signal model; Capacitance; Curve fitting; Equations; Equivalent circuits; Frequency; HEMTs; Scattering parameters; Semiconductor process modeling; Solid modeling; Variable structure systems;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.491030

Filename

491030