Title :
CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking
Author :
Manazza, Alessia ; Gaioni, L. ; Manghisoni, Massimo ; Re, V. ; Traversi, Gianluca ; Bettarini, S. ; Forti, F. ; Morsani, Fabio ; Rizzo, Gianluca
Author_Institution :
INFN Pavia, Pavia, Italy
Abstract :
This work presents the characterization of deep n-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm homogeneous, vertically integrated technology. An evaluation of the 3D MAPS device performance, designed for application of the experiments at the future high luminosity colliders, is provided through the characterization of the prototypes, including tests with infrared (IR) laser, 55Fe and 90Sr sources. The radiation hardness study of the technology will also be presented together with its impact on 3D DNW MAPS performance.
Keywords :
CMOS image sensors; iron; nuclear electronics; particle track visualisation; position sensitive particle detectors; prototypes; readout electronics; semiconductor counters; strontium; 3D DNW MAPS performance impact; 3D MAPS device performance evaluation; 55Fe source; 90Sr source; CMOS MAPS fabrication; IR laser; charged particle tracking; deep n-well CMOS monolithic active pixel sensor characterization; experiment application; future high luminosity colliders; homogeneous 3D process; homogeneous integrated technology; infrared laser; prototype characterization; radiation hardness study; vertically integrated technology; CMOS integrated circuits; Charge measurement; Detectors; Noise; Sensitivity; Standards; Three-dimensional displays; Analog front-end; CMOS; DNW MAPS; vertical integration processes;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2299341
