A ULSI 2-D capacitance simulator for complex structures based on actual processes

Author

Fukuda, Sanae ; Shigyo, Naoyuki ; Kato, Koichi ; Nakamura, Shin

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

9

Issue

1

fYear

1990

fDate

1/1/1990 12:00:00 AM

Firstpage

39

Lastpage

47

Abstract

A two-dimensional (2-D) capacitance simulator for ultra-large-scale integrated (ULSI) circuits using an improved boundary-element method (BEM) is described. The capacitance simulator was linked with a topography/process simulator to estimate the distributed capacitances of complex structures based on actual processes. The utilization of a linear discontinuous element as the shape function is proposed in order to deal with multiregional problems by BEM. Other techniques employed in the simulation program, which enable precise calculation within practical CPU time, are also described. The calculated capacitances show good agreement with the experimental results

Keywords

VLSI; boundary-elements methods; capacitance; circuit CAD; digital simulation; ULSI 2-D capacitance simulator; boundary-element method; complex structures; distributed capacitances; linear discontinuous element; multiregional problems; shape function; topography/process simulator; ultra-large-scale integrated; Analytical models; Boundary element methods; Circuits; Finite difference methods; Impurities; Parasitic capacitance; Shape; Surfaces; Two dimensional displays; Ultra large scale integration;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.45855

Filename

45855